Lines Matching +full:driving +full:- +full:level
1 # SPDX-License-Identifier: (GPL-2.0 OR BSD-2-Clause)
4 ---
5 $id: http://devicetree.org/schemas/pinctrl/realtek,rtd1619b-pinctrl.yaml#
6 $schema: http://devicetree.org/meta-schemas/core.yaml#
11 - TY Chang <tychang@realtek.com>
14 The Realtek DHC RTD1619B is a high-definition media processor SoC. The
20 const: realtek,rtd1619b-pinctrl
26 '-pins$':
29 - $ref: pincfg-node.yaml#
30 - $ref: pinmux-node.yaml#
75 drive-strength:
78 bias-pull-down: true
80 bias-pull-up: true
82 bias-disable: true
84 input-schmitt-enable: true
86 input-schmitt-disable: true
88 drive-push-pull: true
90 power-source:
97 realtek,drive-strength-p:
99 Some of pins can be driven using the P-MOS and N-MOS transistor to
100 achieve finer adjustments. The block-diagram representation is as
104 ||--+
105 +-----o|| P-MOS-FET
106 | ||--+
107 IN --+ +----- out
108 | ||--+
109 +------|| N-MOS-FET
110 ||--+
113 The driving strength of the P-MOS/N-MOS transistors impacts the
114 waveform's rise/fall times. Greater driving strength results in
115 shorter rise/fall times. Each P-MOS and N-MOS transistor offers
117 greater driving strength, contributing to achieving the desired
120 The realtek,drive-strength-p is used to control the driving strength
121 of the P-MOS output.
126 realtek,drive-strength-n:
128 Similar to the realtek,drive-strength-p, the realtek,drive-strength-n
129 is used to control the driving strength of the N-MOS output.
134 realtek,duty-cycle:
136 An integer describing the level to adjust output duty cycle, controlling
142 4: -0.25ns
143 5: -0.5ns
148 - pins
153 - compatible
154 - reg
159 - |
161 compatible = "realtek,rtd1619b-pinctrl";
164 emmc-hs200-pins {
176 realtek,drive-strength-p = <0x2>;
177 realtek,drive-strength-n = <0x2>;
180 i2c-0-pins {
184 drive-strength = <4>;