Lines Matching +full:driving +full:- +full:level
1 # SPDX-License-Identifier: (GPL-2.0 OR BSD-2-Clause)
4 ---
5 $id: http://devicetree.org/schemas/pinctrl/realtek,rtd1319d-pinctrl.yaml#
6 $schema: http://devicetree.org/meta-schemas/core.yaml#
11 - TY Chang <tychang@realtek.com>
14 The Realtek DHC RTD1319D is a high-definition media processor SoC. The
20 const: realtek,rtd1319d-pinctrl
26 '-pins$':
29 - $ref: pincfg-node.yaml#
30 - $ref: pinmux-node.yaml#
76 drive-strength:
79 bias-pull-down: true
81 bias-pull-up: true
83 bias-disable: true
85 input-schmitt-enable: true
87 input-schmitt-disable: true
89 drive-push-pull: true
91 power-source:
98 realtek,drive-strength-p:
100 Some of pins can be driven using the P-MOS and N-MOS transistor to
101 achieve finer adjustments. The block-diagram representation is as
105 ||--+
106 +-----o|| P-MOS-FET
107 | ||--+
108 IN --+ +----- out
109 | ||--+
110 +------|| N-MOS-FET
111 ||--+
114 The driving strength of the P-MOS/N-MOS transistors impacts the
115 waveform's rise/fall times. Greater driving strength results in
116 shorter rise/fall times. Each P-MOS and N-MOS transistor offers
118 greater driving strength, contributing to achieving the desired
121 The realtek,drive-strength-p is used to control the driving strength
122 of the P-MOS output.
127 realtek,drive-strength-n:
129 Similar to the realtek,drive-strength-p, the realtek,drive-strength-n
130 is used to control the driving strength of the N-MOS output.
135 realtek,duty-cycle:
137 An integer describing the level to adjust output duty cycle, controlling
143 4: -0.25ns
144 5: -0.5ns
149 - pins
154 - compatible
155 - reg
160 - |
162 compatible = "realtek,rtd1319d-pinctrl";
165 emmc-hs200-pins {
177 realtek,drive-strength-p = <0x2>;
178 realtek,drive-strength-n = <0x2>;
181 i2c-0-pins {
185 drive-strength = <4>;