Lines Matching +full:driving +full:- +full:level
1 # SPDX-License-Identifier: (GPL-2.0 OR BSD-2-Clause)
4 ---
5 $id: http://devicetree.org/schemas/pinctrl/realtek,rtd1315e-pinctrl.yaml#
6 $schema: http://devicetree.org/meta-schemas/core.yaml#
11 - TY Chang <tychang@realtek.com>
14 The Realtek DHC RTD1315E is a high-definition media processor SoC. The
20 const: realtek,rtd1315e-pinctrl
26 '-pins$':
29 - $ref: pincfg-node.yaml#
30 - $ref: pinmux-node.yaml#
77 drive-strength:
80 bias-pull-down: true
82 bias-pull-up: true
84 bias-disable: true
86 input-schmitt-enable: true
88 input-schmitt-disable: true
90 drive-push-pull: true
92 power-source:
99 realtek,drive-strength-p:
101 Some of pins can be driven using the P-MOS and N-MOS transistor to
102 achieve finer adjustments. The block-diagram representation is as
106 ||--+
107 +-----o|| P-MOS-FET
108 | ||--+
109 IN --+ +----- out
110 | ||--+
111 +------|| N-MOS-FET
112 ||--+
115 The driving strength of the P-MOS/N-MOS transistors impacts the
116 waveform's rise/fall times. Greater driving strength results in
117 shorter rise/fall times. Each P-MOS and N-MOS transistor offers
119 greater driving strength, contributing to achieving the desired
122 The realtek,drive-strength-p is used to control the driving strength
123 of the P-MOS output.
128 realtek,drive-strength-n:
130 Similar to the realtek,drive-strength-p, the realtek,drive-strength-n
131 is used to control the driving strength of the N-MOS output.
136 realtek,duty-cycle:
138 An integer describing the level to adjust output duty cycle, controlling
144 4: -0.25ns
145 5: -0.5ns
150 - pins
155 - compatible
156 - reg
161 - |
163 compatible = "realtek,rtd1315e-pinctrl";
166 emmc-hs200-pins {
178 realtek,drive-strength-p = <0x2>;
179 realtek,drive-strength-n = <0x2>;
182 i2c-0-pins {
186 drive-strength = <4>;