Searched +full:2 +full:v_ap (Results 1 – 5 of 5) sorted by relevance
/linux/arch/arm64/boot/dts/exynos/ |
H A D | exynos5433-tm2-common.dtsi | 92 i2c-gpio,delay-us = <2>; 125 mic-bias-gpios = <&gpr3 2 GPIO_ACTIVE_HIGH>; 168 io-channels = <&adc 2>; 410 regulator-name = "VDD_ALIVE_0.9V_AP"; 417 regulator-name = "VDDQ_MMC2_2.8V_AP"; 427 regulator-name = "VDD1_E_1.8V_AP"; 434 regulator-name = "VDD10_MIF_PLL_1.0V_AP"; 444 regulator-name = "VDD10_DPLL_1.0V_AP"; 454 regulator-name = "VDD10_MIPI2L_1.0V_AP"; 463 regulator-name = "VDD18_MIPI2L_1.8V_AP"; [all …]
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H A D | exynos5433-tm2.dts | 73 interrupts = <2 IRQ_TYPE_EDGE_FALLING>; 80 regulator-name = "TSP_VDD_1.85V_AP";
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/linux/arch/arm/boot/dts/samsung/ |
H A D | exynos4412-midas.dtsi | 3 * Samsung's Exynos4412 based Trats 2 board device tree source 8 * Device tree source file for Samsung's Trats 2 board which is based on 63 cam_af_reg: voltage-regulator-2 { 74 regulator-name = "VSIL_1.2V"; 146 gpios = <&gpx2 2 GPIO_ACTIVE_LOW>; 173 i2c-gpio,delay-us = <2>; 253 i2c-gpio,delay-us = <2>; 272 sda-gpios = <&gpl0 2 (GPIO_ACTIVE_HIGH | GPIO_OPEN_DRAIN)>; 274 i2c-gpio,delay-us = <2>; 357 pullup-uv = <1800000>; /* VCC_1.8V_AP */ [all …]
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H A D | exynos4212-tab3.dtsi | 87 gpios = <&gpx2 2 GPIO_ACTIVE_LOW>; 101 gpios = <&gpx1 2 GPIO_ACTIVE_LOW>; 130 i2c-gpio,delay-us = <2>; 172 i2c_max77693_fuel: i2c-gpio-2 { 174 sda-gpios = <&gpy0 2 (GPIO_ACTIVE_HIGH | GPIO_OPEN_DRAIN)>; 176 i2c-gpio,delay-us = <2>; 197 i2c-gpio,delay-us = <2>; 201 magnetometer@2e { 213 sda-gpios = <&gpl0 2 (GPIO_ACTIVE_HIGH | GPIO_OPEN_DRAIN)>; 215 i2c-gpio,delay-us = <2>; [all …]
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H A D | exynos4412-p4note.dtsi | 62 gpios = <&gpx2 2 GPIO_ACTIVE_LOW>; 94 voltage-regulator-2 { 147 i2c-gpio,delay-us = <2>; 161 i2c-gpio-2 { 163 sda-gpios = <&gpy0 2 (GPIO_ACTIVE_HIGH | GPIO_OPEN_DRAIN)>; 165 i2c-gpio,delay-us = <2>; 215 i2c-gpio,delay-us = <2>; 448 regulator-name = "VCC_1.8V_AP"; 715 regulator-name = "3MP_CORE_1.2V"; 733 samsung,dw-mshc-sdr-timing = <2 3>; [all …]
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